Title:
活性領域がＩｎＮの層を含む発光ダイオード
Document Type and Number:
Japanese Patent JP2016531442
Kind Code:
A
Abstract:
ｎ型ドーピングＩｎＸｎＧａ（１—Ｘｎ）Ｎ層（１０２）及びｐ型ドーピングＩｎＸｐＧａ（１−Ｘｐ）Ｎ層（１０４）、並びに前記ｎ型ドーピングＩｎＸｎＧａ（１—Ｘｎ）Ｎ層及び前記ｐ型ドーピングＩｎＸｐＧａ（１−Ｘｐ）Ｎ層の間に配される活性領域（１０５）を含む発光ダイオード（１００）であって、前記活性領域（１０５）が、−厚さｅＩｎＮ１０６を有する第１のＩｎＮ層（１０６）、−厚さｅＩｎＮ１０８を有する第２のＩｎＮ層（１０８）、−前記ＩｎＮ層の間に配され、ＩｎＸｂＧａ（１−Ｘｂ）Ｎを含み、約３ｎｍ未満の厚さを有する分離層（１１０）、−前記ＩｎＸｎＧａ（１—Ｘｎ）Ｎ層及び前記第１のＩｎＮ層の間に配されるＩｎＸ１Ｇａ（１−Ｘ１）Ｎ層（１１２）、−前記ＩｎＸｐＧａ（１—Ｘｐ）Ｎ層及び前記第２のＩｎＮ層の間に配されるＩｎＸ２Ｇａ（１−Ｘ２）Ｎ層（１１４）、を含み、前記インジウムの組成Ｘｎ、Ｘｐ、Ｘｂ、Ｘ１及びＸ２が、０から約０．２５の間であり、前記厚さｅＩｎＮ１０６及びｅＩｎＮ１０８がｅＩｎＮ１０６＜ｅＩｎＮ１０８である、発光ダイオード（１００）。
Inventors:
Ivan-Christoph Robin
Amelie Dusagne
Amelie Dusagne
Application Number:
JP2016535482A
Publication Date:
October 06, 2016
Filing Date:
August 21, 2014
Export Citation:
Assignee:
INSERM(INSTITUT NATIONAL DE LA SANTE ET DE LA RECHERCHE MEDICALE)
Aredia
Aredia
International Classes:
H01L33/04; H01L33/32
Domestic Patent References:
| JP2008226930A | 2008-09-25 | |||
| JP2013138126A | 2013-07-11 | |||
| JP2004140370A | 2004-05-13 | |||
| JP2009152474A | 2009-07-09 | |||
| JP2014007291A | 2014-01-16 | |||
| JP2012204839A | 2012-10-22 | |||
| JP2008513987A | 2008-05-01 | |||
| JP2002280673A | 2002-09-27 |
Foreign References:
| DE102010012711A1 | 2011-09-29 | |||
| US20110204328A1 | 2011-08-25 |
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AKIHIKO YUKI. ET AL.: "“1-2 ML thick InN-based quantum wells with InGaN barriers for blue-green light emitters”", PHYSICA STATUS SOLIDI (C), vol. 6, no. 2, JPN6020008073, 29 January 2009 (2009-01-29), pages 417 - 420, ISSN: 0004352939
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TATSUO OHASHI, ET AL.: "“High structural quality InN/In0.75Ga0.25N multiple quantum wells grown by molecular beam epitaxy”", APPLIED PHYSICS LETTERS, vol. 89, no. 4, JPN7020000590, 26 July 2006 (2006-07-26), pages 041907 - 1, ISSN: 0004352943
Attorney, Agent or Firm:
Yasuhiko Murayama
Shinya Mitsuhiro
Tatsuhiko Abe
Shinya Mitsuhiro
Tatsuhiko Abe