The light emitting diode which raised optical extraction by the inside and an external optical element

Japanese Patent JP5965095

B2

A light emitting diode, LED, with enhanced light extraction, comprises a p-type layer (14); an n-typc layer (15); and an active layer (13) between the p-typc and n-typc layers. Either one of the p-type or n-type layer is a top layer and the other layer is a bottom layer. A first spreader layer (16) is adjacent to the bottom layer and a second spreader layer (20) is on the top layer. Electrical contacts (18,22) are on at least one of the spreader layers so that a bias applied across the contacts causes the active layer to emit light. A substrate (24) is adjacent to one of the spreader layers. Light extraction structures (26) are integral with the layers and provide surfaces to allow light trapped within the LED to disperse, reflect and/or refract out of the LED.

Brian cyburt
Michael mac
Stephen P. Denver

JP2001542397A

August 10, 2016

November 28, 2000

Click for automatic bibliography generation  

CREE INC.

H01L33/32; H01L25/075; H01L33/08; H01L33/20; H01L33/22; H01L33/44

JP6268259A
JP5167101A
JP10163525A
JP11274568A
JP10270758A
JP9260724A
JP1065221A
JP6430277A
JP1117223A
JP8222761A
JP6125111A
JP7176788A
JP10312971A

Schnitzer I. et al.,”30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes”,Applied Physics Letters,1993,Vol.63, no.16,pp.2174-2176

Koichi Tsujii
Sadao Kumakura
Fumiaki Otsuka
Takaki Nishijima
Hiroyuki Suda
Hiroshi Uesugi
Nobuhiko Suzuki

Previous Patent: A split method, its dividing device, and a dividing device of an original fabric

Next Patent: JPS5965096