Title:
液晶表示装置
Document Type and Number:
Japanese Patent JP7329632
Kind Code:
B2
Abstract:
The invention is directed to a semiconductor device comprising an oxide semiconductor layer, wherein the oxide semiconductor layer comprises a channel formation region, and wherein a hydrogen concentration in the channel formation region is 1×1020cm-3or lower.
Inventors:
Toshinari Sasaki
Junichiro Sakata
Hiroki Ohara
Shunpei Yamazaki
Junichiro Sakata
Hiroki Ohara
Shunpei Yamazaki
Application Number:
JP2022006195A
Publication Date:
August 18, 2023
Filing Date:
January 19, 2022
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/336; G02F1/1368; H01L21/28; H01L29/417; H01L29/786
Domestic Patent References:
| JP2008015226A | ||||
| JP11119252A | ||||
| JP2007123861A | ||||
| JP2006189871A |
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