磁気抵抗効果素子、磁気抵抗効果ヘッド、および磁気記録再生装置

Japanese Patent JP4167428

B2

PROBLEM TO BE SOLVED: To increase the resistance of a part related to spin dependent conduction and, as a result, to increase the resistance change in a vertical conductive magnetoresistive effect element. SOLUTION: The magnetoresistive effect element is provided with a magnetized layer, a magnetizing layer and a nonmagnetic intermediate layer formed between the magnetized layer and the magnetizing layer and an electrode for conducting a sense current substantially vertically with respect to the film surfaces of the layers. At least one layer of the magnetized layer and the magnetizing layer is constituted of a binary alloy, a ternary alloy or an alloy having the crystal structure of body-centered cubic crystal, shown substantially by T1a T2b or Fec Cod Nie (T1 and T2 are the elements selected from a group consisting of Fe, Co and Ni while shown by 25 at.%<=a<=75 at.%, 25 at.%<=b<=75 at.%, a+b=100, 0