Title:
A magneto-resistive effect element, a magnetic head, a magnetic recording and reproducing device, a magnetic memory, a magnetic field sensor
Document Type and Number:
Japanese Patent JP6054479
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve MR change rate of a CCP-CPP element.SOLUTION: A magnetoresistive effect element includes: a magnetization fixed layer in which magnetization is substantially fixed in one direction; a magnetization free layer which is formed opposite the magnetization fixed layer and in which magnetization changes relative to an external magnetic field; a spacer layer which is arranged between the magnetization fixed layer and the magnetization free layer, and includes a current constriction layer having an insulation layer and a conductor causing current to flow through the insulation layer in a layer direction; and a functional layer which contains at least one element selected from Si, Mg, and B and having lower oxide generation free energy than Fe, in at least one of the magnetization free layer and a boundary surface between the magnetization free layer and the spacer layer.
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Inventors:
Yoshihiko Fuji
Hideaki Fukuzawa
Hiromi Yuasa
Zhang Ryo
Lee Min
Michiko Hara
Yoshinari Kurosaki
Hideaki Fukuzawa
Hiromi Yuasa
Zhang Ryo
Lee Min
Michiko Hara
Yoshinari Kurosaki
Application Number:
JP2015131471A
Publication Date:
December 27, 2016
Filing Date:
June 30, 2015
Export Citation:
Assignee:
Toshiba Corporation
tdk Corporation
tdk Corporation
International Classes:
G11B5/39; H01L21/8246; H01L27/105; H01L43/08; H01L43/12
Domestic Patent References:
| JP2006261306A | ||||
| JP2005191312A | ||||
| JP2005019484A | ||||
| JP2003298143A | ||||
| JP2003133614A | ||||
| JP2003060263A | ||||
| JP2003008102A | ||||
| JP2002353535A | ||||
| JP2002208744A | ||||
| JP2002150514A |
Foreign References:
| WO2005112033A1 |
Attorney, Agent or Firm:
Patent Business Corporation Sakura International Patent Office