Title:
MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
Japanese Patent JPH065722
Kind Code:
A
Abstract:
PURPOSE: To enhance the reliability of the ohmic contact of a contact hole or a through hole in a multilayer interconnection.
CONSTITUTION: A contact hole 17 which has been made in a layer insulating film is sputtered and etched in a mixed gas of an inert gas and a reactive gas; an adhesion substance which has been produced on the surface of a lower- layer aluminum interconnection 13 is removed. After that, an aluminum film is deposited by a sputtering operation without being exposed to the outside air; it is patterned. An upper-layer aluminum interconnection 19 is formed.
Inventors:
MAEDA AKIYOSHI
Application Number:
JP15660692A
Publication Date:
January 14, 1994
Filing Date:
June 16, 1992
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L21/28; H01L21/768; (IPC1-7): H01L21/90; H01L21/28
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)
Next Patent: 非晶質シリコンホトダイオ−ドの製造方法