Title:
A manufacturing method of Ag alloy sputtering target and Ag alloy sputtering target, and a manufacturing method of Ag alloy film
Document Type and Number:
Japanese Patent JP6278136
Kind Code:
B2
Abstract:
An Ag alloy sputtering target of the present invention includes, as a composition, 0.1 at% to 3.0 at% of Sn, 1.0 at% to 10.0 at% of Cu, and a balance ofAg and inevitable impurities. In addition, an Ag alloy film of the present invention includes, as a composition, 0.1 at% to 3.0 at% of Sn, 1.0 at% to 10.0 at% of Cu, and a balance of Ag and inevitable impurities.
Inventors:
Yuto Mori
Sohei Nonaka
Shuji Matsuzaki
Sohei Nonaka
Shuji Matsuzaki
Application Number:
JP2017033979A
Publication Date:
February 14, 2018
Filing Date:
February 24, 2017
Export Citation:
Assignee:
Mitsubishi Materials Corporation
International Classes:
C23C14/34; C22C5/06; C22C5/08; C22F1/14; C23C14/14
Domestic Patent References:
| JP2004002929A | ||||
| JP2009024212A | ||||
| JP2012207445A | ||||
| JP2007504593A | ||||
| JP2013216976A | ||||
| JP2014139339A | ||||
| JP6172894A | ||||
| JP6220555A |
Attorney, Agent or Firm:
Masatake Shiga
Mitsuo Teramoto
Yasushi Matsunuma
Fumihiro Hosokawa
Kazunori Onami
Mitsuo Teramoto
Yasushi Matsunuma
Fumihiro Hosokawa
Kazunori Onami