Title:
SOI基板の製造方法
Document Type and Number:
Japanese Patent JP4934966
Kind Code:
B2
Abstract:
The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the steps of forming an oxide film at least on one surface of a first silicon substrate, implanting hydrogen ions from the surface of the first silicon substrate thereby forming an ion-implantation zone in the interior of the first silicon substrate, bonding the first silicon substrate over a second silicon substrate with the oxide film interposed thereby forming a laminated assembly, subjecting the laminated assembly to a first heating treatment consisting of heating at a specified temperature, so that the first silicon substrate is split at the ion-implantation zone thereby manufacturing a bonded substrate, flattening the exposed surface of the SOI layer by subjecting the bonded substrate to wet etching, subjecting the bonded substrate to a second heating treatment consisting of heating at 750 to 900°C in an oxidative atmosphere thereby reducing damages inflicted to the SOI layer, and subjecting the resulting bonded substrate to a third heating treatment consisting of heating at 900 to 1200°C thereby enhancing the bonding strength of the bonded substrate.
Inventors:
Akihiko Endo
Kusaba Tatsumi
Hidehiko Okuda
Etsuro Morita
Kusaba Tatsumi
Hidehiko Okuda
Etsuro Morita
Application Number:
JP2005028502A
Publication Date:
May 23, 2012
Filing Date:
February 04, 2005
Export Citation:
Assignee:
Sumco inc.
International Classes:
H01L27/12; H01L21/02
Domestic Patent References:
| JP2000124092A | ||||
| JP2000294754A | ||||
| JP2004311526A | ||||
| JP2002503400A | ||||
| JP2004259970A |
Attorney, Agent or Firm:
Masayoshi Suda