Title:
A manufacturing method of a SiC board
Document Type and Number:
Japanese Patent JP6126833
Kind Code:
B2
Abstract:
A method for manufacturing a SiC substrate is provided. The method includes: a sacrificial film-forming process of forming a sacrificial film on a surface of a SiC substrate in a film thickness that is equal to or greater than a maximum height difference of the surface; a sacrificial film planarization process of planarizing a surface of the sacrificial film by mechanical processing; and a SiC substrate planarization process of performing dry etching under conditions in which etching selectivity between the SiC substrate and the sacrificial film is in a range of 0.5 to 2.0 so as to remove the sacrificial film and so as to planarize the surface of the SiC substrate.
Inventors:
Yuzo Sasaki
Application Number:
JP2012276164A
Publication Date:
May 10, 2017
Filing Date:
December 18, 2012
Export Citation:
Assignee:
SHOWA DENKO K.K.
International Classes:
H01L21/3065; C30B29/36; C30B33/12
Domestic Patent References:
| JP2010135552A | ||||
| JP2011146662A |
Foreign References:
| US20030062335 |
Attorney, Agent or Firm:
Masatake Shiga
Suzuki Mitsuyoshi
Norihiko Ara
Osamu Mikuni
Suzuki Mitsuyoshi
Norihiko Ara
Osamu Mikuni