Title:
A manufacturing method of a SiC epitaxial wafer
Document Type and Number:
Japanese Patent JP6012841
Kind Code:
B2
Abstract:
A method for manufacturing a SiC epitaxial wafer includes: a first step of, by supplying a Si supply gas and a C supply gas, performing a first epitaxial growth on a SiC bulk substrate with a 4H—SiC(0001) having an off-angle of less than 5° as a main surface at a first temperature of 1480° C. or higher and 1530° C. or lower; a second step of stopping the supply of the Si supply gas and the C supply gas and increasing a temperature of the SiC bulk substrate from the first temperature to a second temperature; and a third step of, by supplying the Si supply gas and the C supply gas, performing a second epitaxial growth on the SiC bulk substrate having the temperature increased in the second step at the second temperature.
Inventors:
Nobuyuki Tomita
Yoichiro Mitani
Takanori Tanaka
Naoyuki Kawabata
Yoshihiko Toyota
Takeharu Kuroiwa
Kenichi Hamano
Akihito Ohno
Junji Ochi
Zenpei Kawazu
Yoichiro Mitani
Takanori Tanaka
Naoyuki Kawabata
Yoshihiko Toyota
Takeharu Kuroiwa
Kenichi Hamano
Akihito Ohno
Junji Ochi
Zenpei Kawazu
Application Number:
JP2015500006A
Publication Date:
October 25, 2016
Filing Date:
December 26, 2013
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/205; C23C16/42; C30B25/20; C30B29/36
Domestic Patent References:
| JP2007284298A | 2007-11-01 | |||
| JP2007131504A | 2007-05-31 | |||
| JP2011121847A | 2011-06-23 | |||
| JP2006032655A | 2006-02-02 | |||
| JP2007284298A | 2007-11-01 | |||
| JP2007131504A | 2007-05-31 | |||
| JP2011121847A | 2011-06-23 | |||
| JP2006032655A | 2006-02-02 |
Foreign References:
| WO2010101016A1 | 2010-09-10 | |||
| WO2010101016A1 | 2010-09-10 |
Attorney, Agent or Firm:
Yoshitake Hidetoshi
Takahiro Arita
Takahiro Arita