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Title:
A manufacturing method of the coating liquid for semiconductor formation, semiconductor membrane, a thin film solar cell, and a thin film solar cell
Document Type and Number:
Japanese Patent JP6259685
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a coating liquid for forming a semiconductor with less impurities, and useful for bulk hetero of solar cell application, and to provide a semiconductor thin film, a thin film solar cell manufactured using the coating liquid for forming a semiconductor, and a method of manufacturing a thin film solar cell.SOLUTION: A coating liquid for forming a semiconductor contains a metal compound, a nitrogen-containing compound, and an organic solvent. When the coating liquid is heated, the metal compound and nitrogen-containing compound react to generate a gas component. A semiconductor thin film produced using the coating liquid for forming a semiconductor, a thin film solar cell, and a method of manufacturing a thin film solar cell are also provided.

Inventors:
Satoshi Ohara
Akinobu Hayakawa
Mayumi Horiki
Kazushi Ito
Application Number:
JP2014050406A
Publication Date:
January 10, 2018
Filing Date:
March 13, 2014
Export Citation:
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Assignee:
Sekisui Chemical Co.,Ltd.
International Classes:
H01L51/44
Domestic Patent References:
JP2009541976A
JP48031947A
Other References:
NAYAK B B, ACHARYA H N, CHAUDHURI T K, MITRA G B,The dip-dry technique for preparing photosensitive Sb2S3 films,Thin Solid Films,スイス,1982年 6月25日,vol.92 No.4,Page.309-314
Organometal Halide Perovskites as Visible-Light Sensitizers for Photovoltaic Cells,JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2009年,vol. 131,p.6050-6051
HUI-SEON KIM et al.,Lead Iodide Perovskite Sensitized All-Solid-State Submicron Thin Film Mesoscopic Solar Cell with Eff,SCIENTIFIC REPORTS,2012年 8月21日,Vol.2,Article number 591,pp.1-7
Attorney, Agent or Firm:
Atomi International Patent Office