Title:
錯体化合物、半導体層形成用原料、半導体層の製造方法および光電変換装置の製造方法
Document Type and Number:
Japanese Patent JPWO2013129466
Kind Code:
A
Inventors:
Hiromitsu Ogawa
Application Number:
JP2013055109
Publication Date:
July 30, 2015
Filing Date:
February 27, 2013
Export Citation:
Assignee:
KYOCERA CORP.
International Classes:
H01L21/368; C07F19/00; H01L31/072; C01G19/00; H01L31/18; C07F1/08; C07F7/22