Title:
A manufacturing method of a compound semiconductor solar cell and a compound semiconductor solar cell
Document Type and Number:
Japanese Patent JP5980826
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a compound semiconductor solar cell having excellent properties, and a method for manufacturing the compound semiconductor solar cell.SOLUTION: The compound semiconductor solar cell comprises a first compound semiconductor photoelectric conversion cell composed of InGaAs, a second compound semiconductor photoelectric conversion cell composed of GaAs or InGaAs, and a compound semiconductor buffer layer disposed between the first compound semiconductor photoelectric conversion cell and the second compound semiconductor photoelectric conversion cell. The compound semiconductor buffer layer is varied so as to increase in a lattice constant from the second compound semiconductor photoelectric conversion cell side toward the first compound semiconductor photoelectric conversion cell side, the lattice constant of the first compound semiconductor photoelectric conversion cell being smaller than the lattice constant of a compound semiconductor layer disposed at a position closest to the first compound semiconductor photoelectric conversion cell out of the compound semiconductor buffer layer, and a lattice constant difference ratio of the lattice constant of the first compound semiconductor photoelectric conversion cell to the lattice constant of the compound semiconductor layer disposed at a position closest to the first compound semiconductor photoelectric conversion cell out of the compound semiconductor buffer layer being 0.15% to 0.74% inclusive.
Inventors:
Takaaki Yasuiin
Tatsuya Takamoto
Tatsuya Takamoto
Application Number:
JP2014042804A
Publication Date:
August 31, 2016
Filing Date:
March 05, 2014
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L31/0725
Domestic Patent References:
| JP200927046A |
Other References:
J.F.Geisz et al.,”High-efficiency GaInP/GaAs/InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction,Applied Physics Letters,Vol.91, No.2 (2007),023502
J.F.Geisz et al.,”Inverted GaInP / (In)GaAs / InGaAs triple-junction solar cells with low-stress metamorphic bottom junctions,33rd IEEE Photovoltaic Specialists Conference, 11-16 May 2008,p.1-5
H.Q.Yang,”First-principle study of the electronic band structure and the effective mass of the ternary alloy GaxIn1-xP”,Journal of Physics: Conference Series,Vol.574 (2015),012048
F.Gao,”Quality-enhanced In0.3Ga0.7As film grown on GaAs substrate with an ultrathin amorphous In0.6Ga0.4As buffer layer”,Applied Physics Letters,Vol.104, No.4 (2014),042104
J.F.Geisz et al.,”Inverted GaInP / (In)GaAs / InGaAs triple-junction solar cells with low-stress metamorphic bottom junctions,33rd IEEE Photovoltaic Specialists Conference, 11-16 May 2008,p.1-5
H.Q.Yang,”First-principle study of the electronic band structure and the effective mass of the ternary alloy GaxIn1-xP”,Journal of Physics: Conference Series,Vol.574 (2015),012048
F.Gao,”Quality-enhanced In0.3Ga0.7As film grown on GaAs substrate with an ultrathin amorphous In0.6Ga0.4As buffer layer”,Applied Physics Letters,Vol.104, No.4 (2014),042104
Attorney, Agent or Firm:
Fukami patent office