Title:
A manufacturing method of the electrode for an optical moisture solution reaction
Document Type and Number:
Japanese Patent JP6270884
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an electrode for a photolytic water decomposition reaction used for producing hydrogen efficiently and industrially advantageously which can remarkably increase a photolytic water decomposition reaction rate under light irradiation.SOLUTION: There is provided an electrode for a photolytic water decomposition reaction which is obtained by accumulating one or more selected from the group consisting of oxynitride, nitride, oxysulfide and sulfide as a photocatalyst constituting a photocatalyst particle (10) on a support (20) and has a semiconductor or good conductor (30) between the photocatalyst particles (10) and between the photocatalyst particle (10) and the support (20), wherein a semiconductor or good conductor is provided between the photocatalyst particles and between the photocatalyst particle and the support by coating and then heat-treating the photocatalyst particles and the support surface with a precursor of the semiconductor or the good conductor and the semiconductor or good conductor (30) is a predetermined material.SELECTED DRAWING: Figure 1
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Inventors:
Kazunari Dou
Jun Kubota
Minegishi
Setoyama Toru
Nobuko Temporary
Jun Kubota
Minegishi
Setoyama Toru
Nobuko Temporary
Application Number:
JP2016035141A
Publication Date:
January 31, 2018
Filing Date:
February 26, 2016
Export Citation:
Assignee:
Mitsubishi Chemical Corporation
National University Corporation Tokyo University
National University Corporation Tokyo University
International Classes:
B01J35/02; B01J27/24; B01J37/02; B01J37/08; C25B1/04; C25B11/04; C25B11/06; C25B11/08; H01G9/20
Domestic Patent References:
| JP2005161203A | ||||
| JP2008155111A | ||||
| JP2005133174A | ||||
| JP11028364A |
Foreign References:
| WO2006010926A1 |
Other References:
Ryu ABE et al.,The Use of TiCl4 Treatment to Enhance the Photocurrent in a TaON Photoelectrode under Visible Light Irradiation,Chemistry Letters,日本,2005年,Vol.34, No.8,p.1162-1163,DOI: http://dx.doi.org/10.1246/cl.2005.1162
阿部竜他,オキシナイトライドTaONの薄膜化による高性能可視光応答性光電極の作成,電気化学会大会講演要旨集,日本,2006年 4月 1日,Vol.73,p.203
西村直之他,Ta3N5薄膜電極の光電気化学特性,日本化学会講演予稿集,日本,2008年 3月12日,Vol.88, No.1,p.439
橋口弘ら,IrO2担持によるGaN:ZnO電極の光電流の向上,第99回触媒討論会討論会A予稿集,2007年 3月28日,140ページ、講演番号2P64
阿部竜他,オキシナイトライドTaONの薄膜化による高性能可視光応答性光電極の作成,電気化学会大会講演要旨集,日本,2006年 4月 1日,Vol.73,p.203
西村直之他,Ta3N5薄膜電極の光電気化学特性,日本化学会講演予稿集,日本,2008年 3月12日,Vol.88, No.1,p.439
橋口弘ら,IrO2担持によるGaN:ZnO電極の光電流の向上,第99回触媒討論会討論会A予稿集,2007年 3月28日,140ページ、講演番号2P64
Attorney, Agent or Firm:
Noriyuki Yamamoto
Akihiko Yamashita
Kishimoto Tatsuto
Akihiko Yamashita
Kishimoto Tatsuto
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