Title:
A manufacturing method of an epitaxial silicon wafer, an epitaxial silicon wafer, and a manufacturing method of a solid-state image sensing device
Document Type and Number:
Japanese Patent JP6107068
Kind Code:
B2
Inventors:
Takeshi Kadono
Kazunari Kurita
Kazunari Kurita
Application Number:
JP2012249681A
Publication Date:
April 05, 2017
Filing Date:
November 13, 2012
Export Citation:
Assignee:
Sumco inc.
International Classes:
H01L21/322; C23C14/48; H01L21/20; H01L21/205; H01L21/265; H01L27/146
Domestic Patent References:
| JP6338507A | ||||
| JP2007525838A | ||||
| JP2009518869A | ||||
| JP2009540531A | ||||
| JP2010040864A | ||||
| JP2012059849A | ||||
| JP2008311418A | ||||
| JP2007317760A | ||||
| JP2010114409A | ||||
| JP2011054821A | ||||
| JP2004221491A |
Other References:
N.G.RUDAWSKI et al,Amorphaization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted Si,Journal of Electronic Materials,米国,Journal of Electronic Materials,2009年 6月25日,Vol.38, NO.9, 2009,pp.1926-1930
Attorney, Agent or Firm:
Kenji Sugimura
Keisuke Kawahara
Keisuke Kawahara