フレキシブル電子デバイスの製造方法

Title:

フレキシブル電子デバイスの製造方法

Document Type and Number:

Japanese Patent JP6452189

Kind Code:

B2

More Like This:

JP2014222723	FIELD-EFFECT SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
JP6294428	A method for producing an oxide for a semiconductor layer of a thin film transistor and a method for improving the characteristics of the thin film transistor.
JP2010062346	DIELECTRIC BREAKDOWN LIFE SIMULATION METHOD, AND SILICON WAFER SURFACE QUALITY EVALUATION METHOD AND PROGRAM

Inventors:

Masahiro Tamada
Kenji Shiojiri
Takehito Negishi

Application Number:

JP2014075804A

Publication Date:

January 16, 2019

Filing Date:

April 01, 2014

Export Citation:

Assignee:

Toyobo Co., Ltd.
Teijin Limited

International Classes:

H01L21/336; C09J7/35; C09J201/00; H01L29/786

Domestic Patent References:

Foreign References:

WO2014021423A1

Attorney, Agent or Firm:

Kyuichi Ueki
Hisahiko Ueki
Tadashi Sugakawa
Hiroaki Ito
Akemi Takeoka
Yukari Shibata

Previous Patent: 高圧鋳造方法

Next Patent: VIDEO DISPLAY CONTROL DEVICE