Title:
GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, AND METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JP2016172659
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor substrate having high flatness, and a method of manufacturing the same.SOLUTION: The method of manufacturing a group III nitride semiconductor substrate is provided in which a group III nitride semiconductor crystal is epitaxially grown on a first plane of a first group III nitride semiconductor layer using MOCVD (Metal Organic Chemical Vapor Deposition) equipment under conditions of a growth temperature of 1,180-1,300°C and a hydrogen carrier flow rate of 10.5-20.0 slm. When a second group III nitride semiconductor layer is formed by laminating three films having film compositions different from each other, the growth rates of a film of an undermost layer, a film immediate above the undermost layer, and a film of an uppermost layer are preferably set to be 0.5-2.0 μm, 1.5-8.0 μm, and 15.0-40.0 μm, respectively. The group III nitride semiconductor substrate is provided that is manufactured by the above manufacturing method and has the second group III nitride semiconductor layer of which the exposed growth plane has higher flatness than that of the first plane of the first group III nitride semiconductor layer.SELECTED DRAWING: None
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Inventors:
SUMIDA YUKITSUNE
NISHIGORI YUTAKA
NISHIGORI YUTAKA
Application Number:
JP2015053197A
Publication Date:
September 29, 2016
Filing Date:
March 17, 2015
Export Citation:
Assignee:
FURUKAWA CO LTD
International Classes:
C30B29/38; C23C16/30; C23C16/34; C30B25/18; H01L21/205
Domestic Patent References:
| JP2013251304A | 2013-12-12 | |||
| JP2008056517A | 2008-03-13 | |||
| JP2000357820A | 2000-12-26 | |||
| JP2002329665A | 2002-11-15 | |||
| JP2012049447A | 2012-03-08 | |||
| JP2014222716A | 2014-11-27 | |||
| JP2010123800A | 2010-06-03 | |||
| JP2007103774A | 2007-04-19 |
Attorney, Agent or Firm:
Shinji Hayami
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