A manufacturing method of a group III nitride semiconductor device

Title:

A manufacturing method of a group III nitride semiconductor device

Document Type and Number:

Japanese Patent JP6002109

Kind Code:

B2

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Inventors:

Nobuhiro Saga
Shinji Tokuyama
Kazuhide Sumiyoshi
Takashi Kyono
Koji Katayama
Tatsushi Hamaguchi
Katsunori Yasushima

Application Number:

JP2013221285A

Publication Date:

October 05, 2016

Filing Date:

October 24, 2013

Export Citation:

Assignee:

住友電気工業株式会社
ソニー株式会社

International Classes:

H01S5/343

Domestic Patent References:

Foreign References:

WO2013011722A1

Attorney, Agent or Firm:

Yoshiki Hasegawa
Yoshiki Kuroki
High Kunio Ki
Ichira Kondo

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