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Title:
高純度シリコンの製造方法
Document Type and Number:
Japanese Patent JP2013521219
Kind Code:
A
Abstract:
A process of producing high-purity silicon includes providing silicon-containing powder, feeding the silicon-containing powder into a gas stream, where the gas has a temperature sufficiently high to convert particles of metallic silicon from a solid state into a liquid and/or gaseous state, collecting and, optionally, condensing the liquid and/or gaseous silicon formed, and cooling the collected liquid and/or condensed silicon in a casting mold,

Inventors:
Yohem Hahn
Ube Kerat
Christian schmidt
Application Number:
JP2012556499A
Publication Date:
June 10, 2013
Filing Date:
March 09, 2011
Export Citation:
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Assignee:
Schmidt Silicon Technology Gezel Shaft Mitt Beschlenktel Haftung
International Classes:
C01B33/037
Domestic Patent References:
JPS5632319A1981-04-01
JP2009115326A2009-05-28
JPS58217422A1983-12-17
JPH10182124A1998-07-07
JPS56169118A1981-12-25
JP2004035398A2004-02-05
Foreign References:
US20090289390A12009-11-26
US4379777A1983-04-12
Attorney, Agent or Firm:
Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Atsushi Ebiya
Yoshihiro Kobayashi
Goji Tasaki