Title:
高純度シリコンの製造方法
Document Type and Number:
Japanese Patent JP2013521219
Kind Code:
A
Abstract:
A process of producing high-purity silicon includes providing silicon-containing powder, feeding the silicon-containing powder into a gas stream, where the gas has a temperature sufficiently high to convert particles of metallic silicon from a solid state into a liquid and/or gaseous state, collecting and, optionally, condensing the liquid and/or gaseous silicon formed, and cooling the collected liquid and/or condensed silicon in a casting mold,
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Inventors:
Yohem Hahn
Ube Kerat
Christian schmidt
Ube Kerat
Christian schmidt
Application Number:
JP2012556499A
Publication Date:
June 10, 2013
Filing Date:
March 09, 2011
Export Citation:
Assignee:
Schmidt Silicon Technology Gezel Shaft Mitt Beschlenktel Haftung
International Classes:
C01B33/037
Domestic Patent References:
JPS5632319A | 1981-04-01 | |||
JP2009115326A | 2009-05-28 | |||
JPS58217422A | 1983-12-17 | |||
JPH10182124A | 1998-07-07 | |||
JPS56169118A | 1981-12-25 | |||
JP2004035398A | 2004-02-05 |
Foreign References:
US20090289390A1 | 2009-11-26 | |||
US4379777A | 1983-04-12 |
Attorney, Agent or Firm:
Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Atsushi Ebiya
Yoshihiro Kobayashi
Goji Tasaki
Takashi Ishida
Tetsuji Koga
Atsushi Ebiya
Yoshihiro Kobayashi
Goji Tasaki