A manufacturing method of a nitride semiconductor crystal

Title:

A manufacturing method of a nitride semiconductor crystal

Document Type and Number:

Japanese Patent JP6055290

Kind Code:

B2

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Inventors:

Shigeru Ito

Application Number:

JP2012257430A

Publication Date:

December 27, 2016

Filing Date:

November 26, 2012

Export Citation:

Assignee:

Sharp Corporation

International Classes:

H01L21/205; C23C16/34

Domestic Patent References:

Foreign References:

Attorney, Agent or Firm:

Sano patent office
Shizuo Sano
Inoue On

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