Title:
アニオン制御された誘電特性を有するペロブスカイト材料の製造方法、およびそれを用いた薄膜コンデンサ装置の製造方法
Document Type and Number:
Japanese Patent JP5673796
Kind Code:
B2
Abstract:
A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N3− anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ABO3−δ)α-(ABO3−δ−γNγ)1−α. A represents a divalent element, B represents a tetravalent element, γ satisfies 0.005≰γ≰1.0, 1−α satisfies 0.05≰1−α≰0.9, and 1−α is an area ratio between the regions containing rich N3− anions and the matrix of remaining oxide perovskite material.
Inventors:
クツァロフォ、イボイル ピー
檜貝 信一
安藤 陽
檜貝 信一
安藤 陽
Application Number:
JP2013505565A
Publication Date:
February 18, 2015
Filing Date:
April 28, 2011
Export Citation:
Assignee:
株式会社村田製作所
International Classes:
H01B3/12; C01G23/00; C23C14/24; H01G4/12; H01G4/33; H01G7/06
Attorney, Agent or Firm:
Patent business corporation pro フィック patent firm