Title:
位相シフトマスクの製造方法及びテンプレートの製造方法
Document Type and Number:
Japanese Patent JP4619043
Kind Code:
B2
Abstract:
A phase shift mask blank 10 having a very thin film (a chromium nitride film) 2 provided on a quartz substrate 1 for forming a phase shift pattern 1 P and a resist film 3 formed thereon is used as a material, a resist pattern 3 P is formed on the resist film 3 , the very thin film 2 is etched by using the resist pattern as a mask, thereby forming a very thin film pattern 2 P, the quartz substrate 1 is etched by using the very thin film pattern 2 P as the mask, thereby forming the phase shift pattern 1 P, and a light shielding film 4 is formed on the substrate 1 over which the formation of the phase shift pattern 1 P and the removal of the resist pattern 3 are completed, and the light shielding film 4 is subjected to selective etching by using a resist 5 , thereby exposing the phase shift pattern 1 P while leaving a shielding portion 4 A in a necessary part. Thus, a phase shift mask 20 is obtained. The thickness of the very thin film 2 is set to be a minimum thickness required for forming a phase shift pattern on the quartz substrate 1 by using the very thin film pattern 2 P as the mask.
Inventors:
Hideaki Mitsui
Application Number:
JP2004164956A
Publication Date:
January 26, 2011
Filing Date:
June 02, 2004
Export Citation:
Assignee:
HOYA CORPORATION
International Classes:
B32B9/00; B32B17/06; G03C5/00; G03F1/32; G03F1/34; G03F1/54; G03F1/60; G03F1/68; G03F1/80; H01L21/027
Domestic Patent References:
| JP2000181048A | ||||
| JP9050116A | ||||
| JP6236021A | ||||
| JP5241320A | ||||
| JP7043885A | ||||
| JP2002244270A | ||||
| JP9080738A |
Foreign References:
| WO2002065211A1 |
Attorney, Agent or Firm:
Aniya Setsuo
Toru Yui
Hitoshi Kiyono
Toru Yui
Hitoshi Kiyono