Title:
A manufacturing method of a photoelectric conversion element and a photoelectric conversion element
Document Type and Number:
Japanese Patent JP6042679
Kind Code:
B2
Abstract:
The photoelectric conversion element includes a semiconductor substrate, a first amorphous film of a first conductivity type disposed on an entire surface of one surface of the semiconductor substrate, a first conductive oxide layer disposed on the first amorphous film, a second amorphous film of the first conductivity type disposed on a part of the other surface of the semiconductor substrate, a second conductive oxide layer disposed on the second amorphous film, a third amorphous film of a second conductivity type disposed on the other part of the other surface of the semiconductor substrate, and a third conductive oxide layer disposed on the third amorphous film. Electric conductivity of the first conductive oxide layer is lower than electric conductivities of the second and the third conductive oxide layer. Transmittance of the first conductive oxide layer is higher than transmittances of the second and the third conductive oxide layer.
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Inventors:
Toshihiko Sakai
Kenji Kimoto
Koide Naojo
Yoshitaka Yamamoto
Kenji Kimoto
Koide Naojo
Yoshitaka Yamamoto
Application Number:
JP2012212547A
Publication Date:
December 14, 2016
Filing Date:
September 26, 2012
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L31/0747; H01L31/0224
Domestic Patent References:
| JP2010177264A | ||||
| JP200821993A | ||||
| JP2003142709A | ||||
| JP2005101151A | ||||
| JP201161151A |
Foreign References:
| WO2012018119A1 |
Attorney, Agent or Firm:
Fukami patent office
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