Title:
フォトマスク、フォトマスクの製造方法、フォトマスクの検査修正方法、半導体集積回路の製造方法および液晶ディスプレイの製造方法
Document Type and Number:
Japanese Patent JP4756720
Kind Code:
B2
Abstract:
The present invention is proposed to solve the problem of conspicuous increases in the drawing time of a circuit pattern when oblique lines are present which leads to high costs and low accuracy for resulting photomasks. For this reason, a shading pattern 3b formed on the principal plane of a transparent base 2 based on layout data of a circuit pattern of a polygon containing a oblique line is converted to polygon data in which a oblique line is expressed in a stepwise form by a number Np of rectangles which are defined by Np=int (W/Rp/m), where W is a width which is the width of the oblique lines, Rp is a resolution of a projection exposure apparatus and m is a magnification of a projection exposure apparatus. The shading pattern 3b is formed on the principal plane of the transparent substrate 2 based on layout data of a circuit pattern of a polygon containing a oblique line.
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Inventors:
Kamon Kazuya
Application Number:
JP4223099A
Publication Date:
August 24, 2011
Filing Date:
February 19, 1999
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H01L21/027; C09K19/00; G03C5/00; G03F1/68; G03F1/72; G03F9/00
Domestic Patent References:
| JP1169451A | ||||
| JP9293669A | ||||
| JP1031301A | ||||
| JP3208051A | ||||
| JP697055A | ||||
| JP4271347A |
Attorney, Agent or Firm:
Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Masayuki Sakai
Nobuo Arakawa
Masato Sasaki
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Masayuki Sakai
Nobuo Arakawa
Masato Sasaki