Title:
THIN FILM TRANSISTOR ARRAY, THIN FILM TRANSISTOR ARRAY MANUFACTURING METHOD AND PIXEL DISPLAY DEVICE
Document Type and Number:
Japanese Patent JP2016163029
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a thin film transistor array manufacturing method which can achieve separation of transistor elements; and provide high-performance and highly-stabilized thin film transistor and image display device.SOLUTION: A thin film transistor comprises: a substrate; a gate electrode; a gate insulator layer; a source electrode and a drain electrode; a first partition layer; a second partition layer; a semiconductor layer formed on the gate insulator layer, the source electrode and the drain electrode, and between the first partition and the second partition in plan view of the substrate; and a protection layer formed on the semiconductor layer in a stripe shape so as to cover a channel part. Both ends of a direction orthogonal to a direction where current passes through the channel part of the semiconductor layer flush with both ends of the protection layer in a width direction, and an extension direction of the stripe shape of the protection layer is a direction parallel with the direction where current passes through the channel part.SELECTED DRAWING: Figure 1
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Inventors:
MURATA KODAI
Application Number:
JP2015043871A
Publication Date:
September 05, 2016
Filing Date:
March 05, 2015
Export Citation:
Assignee:
TOPPAN PRINTING CO LTD
International Classes:
H01L21/336; H01L29/786
Attorney, Agent or Firm:
Patent business corporation Ogasawara patent office