Title:
Substrate processing equipment, semiconductor equipment manufacturing methods and programs
Document Type and Number:
Japanese Patent JP6368732
Kind Code:
B2
Abstract:
A substrate processing apparatus includes: a process chamber where a substrate is processed; a substrate support, disposed in the process chamber, where the substrate is placed; a transfer chamber disposed under the process chamber; a partition dividing the process and transfer chambers; a first heating unit disposed in the substrate support to heat the substrate and the process chamber; a second heating unit disposed in the transfer chamber to heat the transfer chamber; a process gas supply unit to supply a process gas into the process chamber; a first cleaning gas supply unit to supply a cleaning gas into the process chamber; a second cleaning gas supply unit to supply the cleaning gas into the transfer chamber; and a control unit to control the first heating unit, the second heating unit, the process gas supply unit, the first cleaning gas supply unit and the second cleaning gas supply unit.
Inventors:
Hachiman Tachibana
Satoshi Takano
Toyoda and his group
Matsui Shun
Satoshi Takano
Toyoda and his group
Matsui Shun
Application Number:
JP2016065707A
Publication Date:
August 01, 2018
Filing Date:
March 29, 2016
Export Citation:
Assignee:
Hitachi Kokusai Electric Co., Ltd.
International Classes:
H01L21/31; C23C16/44; H01L21/02; H01L21/3065; H01L21/677; H01L21/683
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