SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC EQUIPMENT

Title:

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC EQUIPMENT

Document Type and Number:

Japanese Patent JP2017034258

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To provide a semiconductor device with reduced parasitic capacitance.SOLUTION: A first insulating layer is deposited on a substrate. A first oxide insulating layer and an oxide semiconductor layer are deposited on the first insulating layer. A second oxide insulating layer is deposited on the oxide semiconductor layer and the first insulating layer. A second insulating layer and a first conductive layer are deposited on the second oxide insulating layer. A gate electrode layer, a gate insulating layer, and a third oxide insulating layer are formed by etching. A side wall insulating layer that has a region contacted with a lateral face of the gate electrode layer is formed. A second conductive layer is deposited on the gate electrode layer, the side wall insulating layer, the oxide semiconductor layer, and the first insulating layer. A third conductive layer is deposited on the second conductive layer. A low-resistance region is formed in the oxide semiconductor layer by performing heat treatment. An element included in the second conductive layer moves from the second conductive layer to the oxide semiconductor layer side by the heat treatment, and an element included in the oxide semiconductor layer moves from the oxide semiconductor layer to the third conductive layer side by the heat treatment.SELECTED DRAWING: Figure 1

Inventors:

OKAZAKI YUTAKA
MATSUBAYASHI DAISUKE
SATO YUICHI

Application Number:

JP2016151002A

Publication Date:

February 09, 2017

Filing Date:

August 01, 2016

Export Citation:

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Assignee:

SEMICONDUCTOR ENERGY LAB CO LTD

International Classes:

H01L21/336; H01L21/316; H01L21/363; H01L21/365; H01L21/8234; H01L21/8238; H01L21/8242; H01L27/088; H01L27/092; H01L27/10; H01L27/108; H01L27/146; H01L29/786; H01L51/50; H05B33/14

Domestic Patent References:

JP2013048220A	2013-03-07
JP2013016782A	2013-01-24
JP2012238851A	2012-12-06
JP2013175717A	2013-09-05

Foreign References:

US20130020570A1	2013-01-24
KR20120121846A	2012-11-06

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