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Title:
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR MANUFACTURING DEVICE
Document Type and Number:
Japanese Patent JP2016172881
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of improving the throughput of a process, in the case where a plurality of films are formed in multiple layers, and a semiconductor manufacturing apparatus.SOLUTION: A semiconductor device manufacturing method uses a semiconductor manufacturing apparatus comprising: a turntable enabled to mount at least a first semiconductor substrate and a second semiconductor substrate and enabled to move the positions of the first semiconductor substrate and the second semiconductor substrate by rotating; and a first film deposition chamber and a second film deposition chamber having openings individually at positions, to which a carrying-in can be made by the rises and falls of the first semiconductor substrate and the second semiconductor substrate placed on the turntable. By the rotation of the turntable and the rises and falls of the first semiconductor substrate and the second semiconductor substrate placed on the turntable, the first semiconductor substrate and the second semiconductor substrate are transferred between the first filming chamber and the second filming chamber thereby to form a laminate film over the first semiconductor substrate and the second semiconductor substrate.SELECTED DRAWING: Figure 1

Inventors:
SAKATA ATSUKO
WATANABE KATSURA
WADA JUNICHI
KITAMURA MASAYUKI
ISHIZAKI KENJI
OKUDA SHINYA
OGIWARA HIROTAKA
WAKATSUKI SATOSHI
IKENO DAISUKE
Application Number:
JP2015051953A
Publication Date:
September 29, 2016
Filing Date:
March 16, 2015
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
C23C14/56; C23C16/44; H01L21/683
Domestic Patent References:
JP2003013223A2003-01-15
Foreign References:
US20070215036A12007-09-20
Attorney, Agent or Firm:
Patent Business Corporation Sato International Patent Office