METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICES

Title:

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICES

Document Type and Number:

Japanese Patent JP2016193490

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To provide methods of encapsulation of semiconductor devices, such as MEMS and NEMS, methods of forming air gaps, and associated devices.SOLUTION: A method of manufacturing a semiconductor device includes: providing a substrate comprising a main surface with a non-flat topography, the surface comprising substantial topography variations; and forming a first capping layer having an upper surface and a lower surface over the main surface. During formation of the first capping layer, local defects in the first capping layer are introduced, the local defects being positioned at locations corresponding to the substantial topography variations, and the local defects being suitable for allowing a predetermined fluid to pass through.SELECTED DRAWING: Figure 1-3

More Like This:

WO/2013/076845	ACTUATOR MANUFACTURING METHOD AND ACTUATOR
JP2009090248	STRUCTURE HAVING MICRO FLOW PASSAGE, ITS MANUFACTURING METHOD AND MICROREACTOR
WO/2023/240427	HOLE ARRAY LAYER STRUCTURE, PRE-COATING METHOD, FILM FORMING METHOD AND SEQUENCING DEVICE

Inventors:

WITVROUW ANN
HASPELAGH LUC
GUO BIN
SIMONE SEVERI
CLAES GERT

Application Number:

JP2016140618A

Publication Date:

November 17, 2016

Filing Date:

July 15, 2016

Export Citation:

Click for automatic bibliography generation Help

Assignee:

IMEC
UNIV LEUVEN KATH

International Classes:

B81C1/00; B81B7/02

Domestic Patent References:

JP2009184102A	2009-08-20
JP2009078315A	2009-04-16

Foreign References:

US6478974B1

2002-11-12

Attorney, Agent or Firm:

Takuji Yamada
Mitsuo Tanaka
Haruo Nakano

Previous Patent: A cutting method according to a circular sawing machine and the circular sawing machine

Next Patent: Heat contraction polyester system film