Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2017034006
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To improve a withstanding voltage without increasing a device area.SOLUTION: A P-type electric-field relaxation layer (5) has a difference in depth from a surface of a P-type semiconductor substrate (1) between a part contacted with a P-type well (3) and a part located below an electric-field relaxation oxide film (11). A depth at the part located below the electric-field relaxation oxide film (11) is set depending on a thickness of the electric-field relaxation oxide film (11).SELECTED DRAWING: Figure 1
Inventors:
DOI KAZUTOMO
KIKUTA MITSUHIRO
HOSOKAWA MAKOTO
SAITO MASAHIRO
KIKUTA MITSUHIRO
HOSOKAWA MAKOTO
SAITO MASAHIRO
Application Number:
JP2015150008A
Publication Date:
February 09, 2017
Filing Date:
July 29, 2015
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L21/336; H01L29/78
Attorney, Agent or Firm:
Harakenzo world patent & trademark