Title:
A manufacturing method of a semiconductor device
Document Type and Number:
Japanese Patent JP6006975
Kind Code:
B2
Abstract:
Stable electrical characteristics and high reliability are provided to a semiconductor device including an oxide semiconductor. In a process of manufacturing a transistor including an oxide semiconductor film, an amorphous oxide semiconductor film is formed, and oxygen is added to the amorphous oxide semiconductor film, so that an amorphous oxide semiconductor film containing excess oxygen is formed. Then, an aluminum oxide film is formed over the amorphous oxide semiconductor film, and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that a crystalline oxide semiconductor film is formed.
Inventors:
Junichi Koizuka
Yuhei Sato
Shunpei Yamazaki
Yuhei Sato
Shunpei Yamazaki
Application Number:
JP2012107270A
Publication Date:
October 12, 2016
Filing Date:
May 09, 2012
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/20; H01L21/336; H01L21/477; H01L27/146; H01L29/786
Domestic Patent References:
| JP2010080952A | ||||
| JP8264794A | ||||
| JP2010182819A | ||||
| JP2010080936A |
Foreign References:
| WO2009091013A1 | ||||
| US20090142887 |