A manufacturing method of a semiconductor device and a semiconductor device - Semiconductor Energy Laboratory Co., Ltd.

Title:

A manufacturing method of a semiconductor device and a semiconductor device

Document Type and Number:

Japanese Patent JP6013444

Kind Code:

B2

Abstract:

The invention is directed to a method for manufacturing a semiconductor device comprising the steps of: forming a first oxide semiconductor film over a substrate having an insulating surface; forming a second oxide semiconductor film over the first oxide semiconductor film; heating the first oxide semiconductor film and the second oxide semiconductor film; after the heating, cooling the first oxide semiconductor film and the second oxide semiconductor film in an atmosphere containing oxygen; forming a conductive film over the first oxide semiconductor film and the second oxide semiconductor film; selectively etching the first oxide semiconductor film, the second oxide semiconductor film, and the conductive film to form from the first oxide semiconductor film a semiconductor layer including a channel formation region, from the second oxide semiconductor film a source region and a drain region, and from the conductive film a source electrode layer and a drain electrode layer; and forming an oxide insulating film which is in contact with part of the semiconductor layer, the source region, the drain region, the source electrode layer, and the drain electrode layer; wherein heating is performed for dehydration or dehydrogenation of the first oxide semiconductor film and the second oxide semiconductor film; wherein cooling is performed at a temperature higher than or equal to room temperature and lower than 100 °C; and wherein by forming the oxide insulating film in contact with part of the semiconductor layer, the carrier density of the semiconductor layer is reduced.

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Inventors:

Toshige Sasaki
Junichiro Sakata
Hiroki Ohara
Shunpei Yamazaki

Application Number:

JP2014263776A

Publication Date:

October 25, 2016

Filing Date:

December 26, 2014

Export Citation:

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