Title:
A manufacturing method of a semiconductor device
Document Type and Number:
Japanese Patent JP6031542
Kind Code:
B2
Abstract:
A driving method of a semiconductor device is provided. In a semiconductor device including a bit line, a selection line, a selection transistor, m (m is a natural number greater than or equal to 2) writing word lines, m reading word lines, a source line, and first to m-th memory cells, each memory cell includes a first transistor and a second transistor that holds charge accumulated in a capacitor. The second transistor includes a channel formed in an oxide semiconductor layer. In a driving method of a semiconductor device having the above structure, when writing to a memory cell is performed, the first transistor is turned on so that a first source terminal or a first drain terminal is set to a fixed potential; thus, a potential is stably written to the capacitor.
Inventors:
Takanori Matsuzaki
Kiyoshi Kato
Kiyoshi Kato
Application Number:
JP2015030191A
Publication Date:
November 24, 2016
Filing Date:
February 19, 2015
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/8242; G11C11/405; H01L21/336; H01L21/8234; H01L21/8247; H01L27/06; H01L27/088; H01L27/108; H01L27/115; H01L29/786; H01L29/788; H01L29/792
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