Title:
A manufacturing method of a semiconductor device and a semiconductor device
Document Type and Number:
Japanese Patent JP6138284
Kind Code:
B2
Abstract:
Provided is a semiconductor device 100 of the present invention which includes an element portion 170 and a gate pad portion 180 on the same wide gap semiconductor substrate 110. The element portion 170 includes a first trench structure 146 having a plurality of first protective trenches 142 and first buried layers 144 formed deeper than gate trenches 118. The gate pad portion 180 includes a second trench structure 156 having a plurality of second protective trenches 152 and second buried layers 154. The second trench structure 156 is either one of a structure where the second trench structure includes: a p-type second semiconductor region 158 and a second buried layer made of a conductor or a structure where the second trench structure includes a second buried layer formed of a metal layer which forms a Schottky contact. The second buried layer 154 is electrically connected with the source electrode layer 128. According to the semiconductor device 100 of the present invention, it is possible to provide a semiconductor device which has a high breakdown strength, hardly generates irregularities in electric properties, can perform high speed switching, and has a gate pad portion which is hardly broken down.
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Inventors:
Inoue Tetsuto
Akihiko Sugai
Shunichi Nakamura
Akihiko Sugai
Shunichi Nakamura
Application Number:
JP2015559755A
Publication Date:
May 31, 2017
Filing Date:
July 10, 2015
Export Citation:
Assignee:
Shindengen Industry Co., Ltd.
International Classes:
H01L29/78; H01L21/8234; H01L27/06; H01L27/088; H01L29/06; H01L29/12
Domestic Patent References:
| JP2012243985A | ||||
| JP2013521660A | ||||
| JP2008227514A |
Attorney, Agent or Firm:
Seigo Matsuo
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