Title:
A manufacturing method of a semiconductor device and a semiconductor device
Document Type and Number:
Japanese Patent JP6145195
Kind Code:
B2
Abstract:
An object is to provide a semiconductor device with improved operation. The semiconductor device includes a first transistor, and a second transistor electrically connected to a gate of the first transistor. A first terminal of the first transistor is electrically connected to a first line. A second terminal of the first transistor is electrically connected to a second line. The gate of the first transistor is electrically connected to a first terminal or a second terminal of the second transistor.
Inventors:
Atsushi Umezaki
Hajime Kimura
Hajime Kimura
Application Number:
JP2016088789A
Publication Date:
June 07, 2017
Filing Date:
April 27, 2016
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G11C19/28; G02F1/133; G02F1/1368; G09G3/20; G09G3/36; H01L29/786; H03K17/04; H03K17/687; H03K19/0175; H03K19/094; H03K23/44
Domestic Patent References:
| JP2007317344A | ||||
| JP2007123861A | ||||
| JP2008003602A | ||||
| JP2005050502A | ||||
| JP2009260378A |