A manufacturing method of a semiconductor layered product and a semiconductor layered product

Japanese Patent JP6165884

B2

A semiconductor layer sequence includes a first nitridic compound semiconductor layer, a second nitridic compound semiconductor layer, and an intermediate layer arranged between the first and second nitridic compound semiconductor layers. Beginning with the first nitridic compound semiconductor layer, the intermediate layer and the second nitridic compound semiconductor layer are arranged one after the other in a direction of growth of the semiconductor layer sequence and are adjacent to each other in direct succession. The intermediate layer has a lattice constant different from the lattice constant of the first nitridic compound semiconductor layer at least at some points. The second nitridic compound semiconductor layer is lattice-adapted to the intermediate layer at least at some points.

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Bergbauer Werner
Drexel Philip
Stauss Peter
Rhode Patrick

JP2015555676A

July 19, 2017

January 28, 2014

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Osram Opto Semiconductors GmbH

H01L21/205; H01L31/10; H01L33/22; H01L33/32

JP2010521065A
JP2012094905A
JP11121799A
JP2012134294A
JP2003264314A
JP2005159207A
JP2012256833A
JP5127978B1
JP2012094752A
JP2008060331A
JP2012074665A

US20080220555
US20080217645
US20120153439
US20120292632
US20050118752
WO1999030373A1
US20110266552

Koichi Washida

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