The manufacturing method of a semiconductor substrate, and a semiconductor substrate

Japanese Patent JP6156252

B2

Provided is a semiconductor-substrate production method in which the distribution profile of specific atoms implanted in a substrate in order to form amorphous layers can be suitably controlled. This semiconductor-substrate production method is provided with a polycrystalline-layer formation step in which a semiconductor polycrystalline layer is formed on the surface of a support substrate and/or the surface of a single crystal layer. The semiconductor-substrate production method is further provided with: an amorphous-layer formation step in which a first amorphous layer including specific atoms is formed by irradiating the surface of the support substrate with the specific atoms in a vacuum, and a second amorphous layer including specific atoms is formed by irradiating the surface of the single crystal layer with the specific atoms in a vacuum; a contact step in which the first amorphous layer and the second amorphous layer are brought into contact with each other to form a bonded substrate; and a heat treatment step in which the bonded substrate is heat-treated. The specific atoms are inert atoms which do not crystallize with compound semiconductors. The average crystal grain size of the polycrystalline layer(s) formed in the polycrystalline-layer formation step is less than that of the support substrate.

Isao Imaoka

JP2014102569A

July 05, 2017

May 16, 2014

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KABUSHIKI KAISHA TOYOTA JIDOSHOKKI

B23K20/00; H01L21/02

JP2013251405A
JP2004503942A
JP2014216571A

Kaiyu International Patent Office

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