Title:
ジチアン誘導体、重合体、レジスト組成物、並びに、前記レジスト組成物を用いた半導体の製造方法
Document Type and Number:
Japanese Patent JP5201207
Kind Code:
B2
Abstract:
A dithiane derivative, having a structure expressed by the following general formula 1: where R1 is —H, or —CH3, a polymer containing a monomer unit containing the dithiane derivative, a resist composition containing the polymer, and a method for manufacturing a semiconductor device using the resist composition.
Inventors:
Koji Nozaki
Application Number:
JP2010514295A
Publication Date:
June 05, 2013
Filing Date:
May 29, 2008
Export Citation:
Assignee:
富士通株式会社
International Classes:
C07D339/08; C08F20/38; G03F7/039; H01L21/027
Domestic Patent References:
| JP2000267287A | 2000-09-29 | |||
| JPH07209867A | 1995-08-11 | |||
| JP2000509075A | 2000-07-18 | |||
| JP2002255930A | 2002-09-11 | |||
| JP2006309245A | 2006-11-09 | |||
| JP2000267287A | 2000-09-29 | |||
| JPH07209867A | 1995-08-11 | |||
| JP2000509075A | 2000-07-18 | |||
| JP2002255930A | 2002-09-11 | |||
| JP2006309245A | 2006-11-09 |
Attorney, Agent or Firm:
Koichi Hirota