Title:
A manufacturing method of a silicon carbide semiconductor device, and a silicon carbide semiconductor device
Document Type and Number:
Japanese Patent JP6074785
Kind Code:
B2
Inventors:
Naoyuki Ose
Makifuchi Yoichi
Mitsuo Okamoto
Kenji Fukuda
Makifuchi Yoichi
Mitsuo Okamoto
Kenji Fukuda
Application Number:
JP2012104221A
Publication Date:
February 08, 2017
Filing Date:
April 27, 2012
Export Citation:
Assignee:
National Institute of Advanced Industrial Science and Technology
Fuji Electric Co., Ltd.
Fuji Electric Co., Ltd.
International Classes:
H01L21/336; H01L21/768; H01L21/822; H01L27/04; H01L29/12; H01L29/78
Domestic Patent References:
| JP2008244456A | ||||
| JP2007242744A | ||||
| JP2002075999A | ||||
| JP2011211212A | ||||
| JP2007096263A | ||||
| JP2008244455A |
Foreign References:
| WO2011027831A1 |
Attorney, Agent or Firm:
Akinori Sakai