PRODUCTION METHOD OF SINGLE CRYSTAL

Japanese Patent JP2017007884

A

PROBLEM TO BE SOLVED: To provide a single crystal production method capable of implementing seeding by detecting that a temperature of raw material melt is a suitable temperature for seeding in good repeatability.SOLUTION: The production method of the single crystal includes: a weight change measuring step S11 for measuring weight change of a seed crystal per unit time, when the seed crystal is contacted to the raw material melt; a step S12 for determining whether the weight change of the measured seed crystal per unit time is within a preset range; a single crystal growing step S13 for being implemented in the case when the weight change is within the preset range; a seed crystal position changing step S14 for separating the seed crystal from the raw material melt, when the weight change measured at the weight change measuring step is determined to exceed the preset range; a control temperature calculation step S15 for calculating a difference temperature between a temperature of the raw material melt and that of the raw material melt suitable for seeding; a raw material melt temperature control step S16 for controlling the temperature of the raw material melt based on the result; and a seed crystal contacting step S17 for contacting the seed crystal to the raw material melt again. The single crystal growing step S13 is implemented after the seed crystal contacting step.SELECTED DRAWING: Figure 2

WO/2014/052958	METHOD, DIE, AND APPARATUS FOR CRYSTAL GROWTH
JP4894848	Method for manufacturing silicon single crystal
JPS6065788	PRODUCTION OF SINGLE CRYSTAL

TERAJIMA AKIRA
NISHIKAWA TAKAHIRO

JP2015123308A

January 12, 2017

June 18, 2015

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SUMITOMO METAL MINING CO

C30B15/28

JPS56164098A	1981-12-16
JPS59184795A	1984-10-20
JPS56164098A	1981-12-16
JPS59184795A	1984-10-20

Tadashige Ito
Tadahiko Ito

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