Title:
SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, PROGRAM AND RECORDING MEDIUM
Document Type and Number:
Japanese Patent JP2016176129
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To partially adjust a plasma distribution in a processing region in order to suppress reduction in the in-plane uniformity of a film formed on a substrate.SOLUTION: The substrate processing apparatus comprises: a substrate placement part for placing a substrate; a division structure for forming a processing region in a space facing the substrate placement; a gas supplying part for supplying processing gas to the processing region having the formed division structure; and a plasma generation part for bringing the processing gas supplied to the processing region by the gas supplying part into a plasma state to generate active species of the processing gas and independently controlling the degree of activity of the active species for each portion of the processing region when brought into the plasma state.SELECTED DRAWING: Figure 9
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Inventors:
OHASHI TADASHI
TOYODA KAZUYUKI
MATSUI SHUN
TOYODA KAZUYUKI
MATSUI SHUN
Application Number:
JP2015058326A
Publication Date:
October 06, 2016
Filing Date:
March 20, 2015
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC
International Classes:
C23C16/509; C23C16/52; H01L21/205; H01L21/31; H05H1/46
Attorney, Agent or Firm:
Fukuoka Masahiro
Aniya Setsuo
Aniya Setsuo