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Title:
The manufacturing method of a substrate processing device and a semiconductor device, a program, and a recording medium
Document Type and Number:
Japanese Patent JP5913414
Kind Code:
B2
Abstract:
A method of manufacturing a semiconductor device by processing a substrate by supplying a processing space with a gas dispersed in a buffer space disposed at an upstream side of the processing space is provided. The method includes (a) transferring the substrate into the processing space while exhausting a transfer space of the substrate by a first vacuum pump; (b) closing a first valve disposed at a downstream side of the first vacuum pump; (c) supplying the gas into the processing space via the buffer space; and (d) exhausting the buffer space through an exhaust pipe connected to a downstream side of the first valve.

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Inventors:
Yoji Ashihara
Ogawa manned
Application Number:
JP2014069342A
Publication Date:
April 27, 2016
Filing Date:
March 28, 2014
Export Citation:
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Assignee:
Hitachi Kokusai Electric Co., Ltd.
International Classes:
H01L21/02; F04B37/16; H01L21/31
Domestic Patent References:
JP2009524244A
JP9195976A
JP2009176799A
JP8260158A
JP11067737A
JP2001053008A
JP2008192644A
Foreign References:
US5637153
US20050126484



 
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