Title:
A manufacturing method, a substrate processing device, and a program of a semiconductor device
Document Type and Number:
Japanese Patent JP6147913
Kind Code:
B2
Abstract:
A method of manufacturing a semiconductor device may include: (a) loading a substrate into a process chamber, the substrate having: a process surface provided with a first metal film containing at least a first metal element; (b) forming a second metal film on the substrate loaded in the process chamber by alternately supplying a metal compound and a first reactive gas reactive with the metal compound to the substrate a plurality of times; (c) alternately performing steps (c-1) and (c-2) a plurality of times wherein the step (c-1) includes: forming an amorphous third metal film on the second metal film, and the step (c-2) includes: forming a fourth metal film on the third metal film; and (d) forming an amorphous fifth metal film on the fourth metal film by supplying the metal compound mixed with the second reactive gas to the substrate.
Inventors:
Ogawa manned
Seino Atsuro
Seino Atsuro
Application Number:
JP2016509842A
Publication Date:
June 14, 2017
Filing Date:
March 28, 2014
Export Citation:
Assignee:
Hitachi Kokusai Electric Co., Ltd.
International Classes:
H01L21/285; C23C16/14; C23C28/00
Domestic Patent References:
| JP2003142425A | ||||
| JP2004273764A | ||||
| JP2002038271A | ||||
| JP2003193233A | ||||
| JP2005158947A | ||||
| JP11330005A |
Foreign References:
| WO2007004443A1 |
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