Title:
A manufacturing method, a substrate processing device, and a program of a semiconductor device
Document Type and Number:
Japanese Patent JP6176811
Kind Code:
B2
Abstract:
There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.
Inventors:
Yoshinobu Nakamura
Kiyohiko Maeda
▲ひろせ▼ 義朗
Ryota Sasashima
Yoshikazu Hashimoto
Kiyohiko Maeda
▲ひろせ▼ 義朗
Ryota Sasashima
Yoshikazu Hashimoto
Application Number:
JP2016529619A
Publication Date:
August 09, 2017
Filing Date:
June 24, 2015
Export Citation:
Assignee:
Hitachi Kokusai Electric Co., Ltd.
International Classes:
H01L21/318; C23C16/34; C23C16/455; H01L21/31
Domestic Patent References:
| JP2000114252A | ||||
| JP2014013928A | ||||
| JP2013140946A | ||||
| JP2014030041A | ||||
| JP2009170823A | ||||
| JP2008182001A |
Foreign References:
| WO2013027549A1 |
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