Title:
The manufacturing method, a substrate treating method, a substrate processing device, and a program of a semiconductor device
Document Type and Number:
Japanese Patent JP6030378
Kind Code:
B2
Abstract:
A method of manufacturing a semiconductor device includes forming a thin film containing a specific element, oxygen, carbon, and nitrogen by performing a cycle a predetermined number of times. The cycle includes supplying a specific element-containing gas, supplying a carbon-containing gas, supplying an oxidizing gas, and supplying a nitriding gas. The act of supplying the nitriding gas is performed before the act of supplying the specific element-containing gas, and the act of supplying the carbon-containing gas and the act of supplying the oxidizing gas are not performed until the act of supplying the specific element-containing gas is performed.
Inventors:
Ryota Sasashima
Yoshinobu Nakamura
Yoshinobu Nakamura
Application Number:
JP2012179926A
Publication Date:
November 24, 2016
Filing Date:
August 14, 2012
Export Citation:
Assignee:
Hitachi Kokusai Electric Co., Ltd.
International Classes:
H01L21/314; C23C16/42; H01L21/31
Domestic Patent References:
| JP2011238894A | ||||
| JP2008258591A | ||||
| JP2007189173A | ||||
| JP11087341A |
Attorney, Agent or Firm:
Fukuoka Masahiro
Aniya Setsuo
Hitoshi Kiyono
Aniya Setsuo
Hitoshi Kiyono
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