Method for Manufacturing Thin Film Ferroelectric Devices Using Two-Step Temperature Process

Japanese Patent JP6366824

B2

Methods for producing ferroelectric device are described. A method includes positioning an organic polymeric ferroelectric layer between two conductive materials to form a stack. The stack can be subjected to a 2-step heat treating process. The first heat treating step transforms the organic polymeric ferroelectric precursor to a ferroelectric material having ferroelectric hysteresis properties, and the second heat treating step densities the ferroelectric material to obtain the ferroelectric device. The thin film ferroelectric device can include a thin film ferroelectric capacitor, a thin film ferroelectric transistor, or a thin film ferroelectric diode.

WO/2022/084801	FERROELECTRIC DEVICE, AND SEMICONDUCTOR DEVICE
WO/2021/050114	THREE-DIMENSIONAL MEMORY DEVICE CONTAINING FERROELECTRIC MEMORY ELEMENTS ENCAPSULATED BY TRANSITION METAL-CONTAINING CONDUCTIVE ELEMENTS AND METHOD OF MAKING THEREOF
WO/2020/149937	THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES INCLUDING A BACKSIDE GATE ELECTRODE AND METHODS OF MAKING SAME

Park, The, Hoon
Arshalief, Husum, N
Oday, Ihab, N
Can, mode, ray

JP2017513515A

August 01, 2018

June 04, 2015

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Subic Global Technologies Besloten Fennaught Shap

H01L27/1159; H01G4/14; H01G4/33; H01L37/02; H01L41/09; H01L41/113

JP2014152238A
JP56126912A
JP2011508963A

WO2014104345A1
WO2010104196A1

Patent business corporation r&c

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