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Title:
メカノケミカル研磨方法及びメカノケミカル研磨装置
Document Type and Number:
Japanese Patent JP4028163
Kind Code:
B2
Abstract:
In a mechanochemical polishing apparatus, a SiC wafer is held on a wafer holding table. The surface of the wafer to be polished is pressed against a polishing cloth applied to a polishing platen with a predetermined processing pressure. The wafer holding table and polishing platen are then rotated to perform polishing with chemical liquid dropped on the polishing cloth. The chemical liquid includes chromium (III) oxide as abrasive grains and hydrogen peroxide water (oxidizing agent) for improving polishing efficiency.

Inventors:
Masaki Matsui
Application Number:
JP2000259116A
Publication Date:
December 26, 2007
Filing Date:
August 29, 2000
Export Citation:
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Assignee:
株式会社デンソー
International Classes:
B24B37/00; B24B37/20; B24B37/24; C09G1/02; C09K3/14; H01L21/304; H01L21/306
Domestic Patent References:
JP4122571A
JP3281165A
JP780770A
JP6277993A
JP6278013A
JP4336949A
JP2002526594A
Attorney, Agent or Firm:
Hirohiko Usui
Takashi Ito



 
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