Title:
A method for carrying out chemical mechanical polishing of the copper
Document Type and Number:
Japanese Patent JP6041095
Kind Code:
B2
Abstract:
A method for chemical mechanical polishing of a copper substrate, is provided, comprising: providing a copper substrate; providing slurry composition comprising, as initial components: water; 0.1 to 20 wt % abrasive; 0.01 to 15 wt % complexing agent; 0.02 to 5 wt % inhibitor; 0.01 to 5 wt % phosphorus containing compound; 0.001 to 3 wt % polyvinyl pyrrolidone; >0.1 to 1 wt % histidine; >0.1 to 1 wt % guanidine; optional oxidizing agent; optional leveling agent; optional biocide; and, optional pH adjusting agent; wherein the slurry composition provided has pH of 9 to 11; providing a chemical mechanical polishing pad with a polishing surface; dispensing the slimy composition onto the polishing surface at or near the interface between the polishing surface and the substrate; and, creating dynamic contact at an interface between the polishing surface and the substrate with a down force of 0.69 to 34.5 kPa; wherein the substrate is polished.
Inventors:
Cheng Chu Ye
Application Number:
JP2012173340A
Publication Date:
December 07, 2016
Filing Date:
August 03, 2012
Export Citation:
Assignee:
Rohm and Haas Electronic Materials CMP Housings, Inc.
International Classes:
H01L21/304; B24B37/00; B24B37/24; C09K3/14
Domestic Patent References:
| JP2009049402A | ||||
| JP2010135792A | ||||
| JP2011515023A | ||||
| JP2008160112A | ||||
| JP2010153865A |
Attorney, Agent or Firm:
Hajime Tsukuni