Title:
銅をスパッタ堆積させる方法
Document Type and Number:
Japanese Patent JP5226913
Kind Code:
B2
Abstract:
The disclosure relates to a DC magnetron sputter reactor (50) for sputtering copper, its method of use, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. Also, a method of coating copper into a narrow and deep via or trench using SIP for a first copper layer is disclosed. SIP is promoted by a small magnetron (130) having poles (132, 134) of unequal magnetic strength and a high power applied to the target during sputtering. The target power for a 200mm wafer is preferably at least 10kW; more preferably, at least 18kW; and most preferably, at least 24kW. Hole filling with SIP is improved by long-throw sputtering in which the target-to-substrate spacing (56 to 58) is at least 50% of substrate diameter, more preferably at least 80%, most preferably at least 140%. The SIP copper layer (150) can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). For very high aspect-ratio holes (22), a copper seed layer is deposited by chemical vapor deposition (CVD) over the SIP copper nucleation layer, and PVD or ECP completes the hole filling. The copper seed layer may be deposited by a combination of SIP and high-density plasma sputtering. For very narrow holes, the CVD copper layer may fill the hole. Preferably, the plasma is ignited in a cool process in which low power is applied to the target in the presence of a higher pressure of argon working gas. After ignition, the pressure is reduced, and target power is ramped up to a relatively high operational level to sputter deposit the film.
Inventors:
トニー ピー チアン
ユー ディー コン
ペイユン ディン
ジアンミン フー
ハワード エイチ タン
アニシュ トリア
ユー ディー コン
ペイユン ディン
ジアンミン フー
ハワード エイチ タン
アニシュ トリア
Application Number:
JP2000347303A
Publication Date:
July 03, 2013
Filing Date:
October 10, 2000
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
C23C14/04; C23C14/34; C23C14/35; C23C14/56; H01J37/32; H01J37/34; H01L21/203; H01L21/28; H01L21/285; H01L21/288; H01L21/3205; H01L21/768; H01L23/52
Domestic Patent References:
| JP1174225A |
Foreign References:
| WO1999017330A1 |
Other References:
小林春洋,スパッタ薄膜-基礎と応用-,1993年2月25日,初版第1刷,pp.84~90
赤崎正則 他,プラズマ工学の基礎,1991年5月30日,初版,第7刷,pp.45~47
赤崎正則 他,プラズマ工学の基礎,1991年5月30日,初版,第7刷,pp.45~47
Attorney, Agent or Firm:
中村 稔
大塚 文昭
熊倉 禎男
西島 孝喜
箱田 篤
平野 誠
大塚 文昭
熊倉 禎男
西島 孝喜
箱田 篤
平野 誠
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