A method and a device for an alternative nitriding process

Japanese Patent JP6049720

B2

Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

JP2007529909	Improved rails for semiconductor wafer carriers
JPS62293619	MANUFACTURE OF SEMICONDUCTOR DEVICE
JPH03292730	PLASMA PROCESSOR

Rogers, Matthew S.
Curtis, roger
Howrill Chuck, Lara
Rei, Ken Kun
Fan, Bernard El.
Tobin, Jeffrey
Olsen, Christopher S.
Bevan, Malcolm J.

JP2014525018A

December 21, 2016

June 29, 2012

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APPLIED MATERIALS,INCORPORATED

H01L21/31; H01L21/318; H01L21/336; H01L21/8247; H01L27/115; H01L29/788; H01L29/792

JP2009239151A
JP2005064037A
JP2002100624A
JP59169143A
JP2005213551A
JP7169758A
JP2002543584A
JP2007073539A

US20020020429

Sonoda Yoshitaka
Kobayashi Yoshinori

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